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| NTE2361 (NPN) & NTE2362 (PNP) Silicon Complementary Transistors High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general-purpose amplifier and high speed switching applications. The high gain of these devices makes it possible for them to be driven directly from integrated circuits. Features: D Very Small-Sized Package D High Breakdown Voltage: VCEO = 50V Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. For PNP device (NTE2362), voltage and current values are negative. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Symbol ICBO IEBO hFE fT Test Conditions VCB = 40Vdc, IE = 0 VBE = 4Vdc VCE = 5V, IC = 10mA VCE = 10V, IC = 50mA NTE2361 NTE2362 Min - - 200 - - Typ - - - 200 300 Max Unit 0.1 0.1 400 - - MHz MHz A A Electrical Characteristics (Cont'd): (TC = 25C unless otherwise specified) Parameter Output Capacitance Symbol Cob Test Conditions VCB = 10Vdc, f = 1MHz IC = 100mA, IB = 10mA NTE2361 NTE2362 NTE2361 NTE2362 Min - - - - - 60 50 5 - - NTE2361 NTE2362 - - Typ 5.6 3.7 0.15 0.1 0.8 - - - 70 400 50 70 Max Unit - - 0.4 0.3 1.2 - - - - - - - pF pF V V V V V V ns ns ns ns Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Rise Time Storage Time Fall Time VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf IC = 100mA, IB = 10mA IC = 10A, IE = 0 IC = 100A, RBE = IE = 10A, IC = VCC = 20V, IC = 100mA, IB1 = 10mA, IB2 = 100mA Note 1. For PNP device (NTE2362), voltage and current values are negative. Note 2. Conditions apply to both except where noted. .165 (4.2) Max .126 (3.2) Max .071 (1.8) .500 (12.7) Max ECB .050 (1.27) .050 (1.27) .035 (0.9) .102 (2.6) Max |
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